80812 tkim/91510pe tkim tc-00002461 no. a1822-1/9 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 VEC2616 power mosfet 60v, 3a, 80m , ? 60v, ? 2.5a, 137m , complementary dual vec8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-resistance nch: r ds (on)1=62m (typ.), pch: r ds (on)1=105m (typ.) ? 4v drive ? n-channel mosfet + p-channel mosfet ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 60 --60 v gate-to-source voltage v gss 20 20 v drain current (dc) i d 3 --2.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 12 --10 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 0.9 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.0 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7012-002 ordering number : ena1822a 2.9 0.65 2.8 0.25 0.25 2.3 0.75 0.07 0.3 1234 8765 0.15 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 vec8 VEC2616-tl-h product & package information ? package : vec8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection tl up lot no. 87 6 5 1234
VEC2616 no. a1822-2/9 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d =1.5a 2.6 s static drain-to-source on-state resistance r ds (on)1 i d =1.5a, v gs =10v 62 80 m r ds (on)2 i d =0.75a, v gs =4.5v 76 106 m r ds (on)3 i d =0.75a, v gs =4v 83 116 m input capacitance ciss v ds =20v, f=1mhz 505 pf output capacitance coss 57 pf reverse transfer capacitance crss 37 pf turn-on delay time t d (on) see speci ed test circuit. 7.3 ns rise time t r 7.5 ns turn-off delay time t d (off) 41 ns fall time t f 22 ns total gate charge qg v ds =30v, v gs =10v, i d =3a 10 nc gate-to-source charge qgs 1.6 nc gate-to-drain ?miller? charge qgd 2.1 nc diode forward voltage v sd i s =3a, v gs =0v 0.81 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --60 v zero-gate voltage drain current i dss v ds =--60v, v gs =0v --1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--1.5a 3.9 s static drain-to-source on-state resistance r ds (on)1 i d =--1.5a, v gs =--10v 105 137 m r ds (on)2 i d =--0.75a, v gs =--4.5v 128 180 m r ds (on)3 i d =--0.75a, v gs =--4v 138 194 m input capacitance ciss v ds =--20v, f=1mhz 420 pf output capacitance coss 54 pf reverse transfer capacitance crss 44 pf turn-on delay time t d (on) see speci ed test circuit. 6.4 ns rise time t r 9.8 ns turn-off delay time t d (off) 65 ns fall time t f 36 ns total gate charge qg v ds =--30v, v gs =--10v, i d =--2.5a 11 nc gate-to-source charge qgs 1.4 nc gate-to-drain ?miller? charge qgd 2nc diode forward voltage v sd i s =--2.5a, v gs =0v --0.83 --1.2 v
VEC2616 no. a1822-3/9 switching time test circuit [n-channel] [p-channel] ordering information device package shipping memo VEC2616-tl-h vec8 3,000pcs./reel pb free and halogen free [nch] [nch] [nch] [nch] r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v it15538 --60 20 120 40 90 70 140 60 30 50 100 130 150 110 80 160 --40 --20 0 20 40 60 80 100 120 140 160 v gs =4.5v, i d =0.75a v gs =10.0v, i d =1.5a v gs =4.0v, i d =0.75a 0481214 2 6 10 16 it15537 170 30 40 60 50 70 90 80 130 110 100 140 120 160 150 ta=25 c i d =0.75a 1.5a i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a 2.0 3.0 5.5 6.0 1.0 1.5 4.0 2.5 3.5 0.5 4.5 5.0 0 0 1.0 2.0 4.0 4.5 0.2 0.1 3.0 1.5 0.5 2.5 3.5 0 0.4 1.0 0.8 0.6 0.3 0.5 0.9 0.7 it13789 0 0.5 1.0 2.0 3.0 1.5 2.5 3.5 4.0 it13790 ta=75 c -- 2 5 c 4.0v 3.5v 3.0v v ds =10v 15.0v 10.0v 25 c 4.5v v gs =2.5v 7.0v pw=10 s d.c. 1% p. g 50 g s d i d =1.5a r l =20 v dd =30v v out v in 10v 0v v in VEC2616 pw=10 s d.c. 1% p. g 50 g s d i d = --1.5a r l =20 v dd = --30v v out v in 0v --10v v in VEC2616
VEC2616 no. a1822-4/9 [nch] [nch] [nch] [nch] [nch] [nch] [pch] [pch] sw time -- i d ciss, coss, crss -- v ds i s -- v sd drain current, i d -- a switching time, sw time -- ns diode forward voltage, v sd -- v source current, i s -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a 5 3 2 3 2 7 7 5 10 it13795 it13793 0.1 1.0 23 57 23 57 02040 10 30 50 60 100 10 2 1000 7 5 3 2 7 5 3 it13796 it13794 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 v gs =0v --25 c 25 c ta=75 c t d (on) t d (off) t f t r v dd =30v v gs =10v ciss coss crss f=1mhz 0.01 0.1 0.1 27 35 2 10 27 35 1.0 7 35 1.0 7 5 3 2 2 7 7 5 3 v ds =10v 75 c ta= --25 c 25 c 10 7 5 3 | y fs | -- i d forward transfer admittance, | y fs | -- s v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v 0479 6 23 5 1810 0 4 6 8 10 9 7 5 1 2 3 it13797 v ds =30v i d =3a -- 2 -- 1 -- 5 -- 3 -- 4 0 0 --0.5 --1.5 --2.0 --1.0 --2.5 0 --1.0 --0.8 --0.6 --0.1 --0.2 --0.4 --0.9 --0.7 --0.3 --0.5 it15911 0 --1.0 --0.5 --2.0 --1.5 --3.0 --2.5 --3.5 it15912 ta=75 c --25 c v gs = --2.5v v ds = --10v --3.5v --16 .0v 25 c --10.0v --4.0v --4.5v it15910 0.01 0.1 23 5 23 57 7 1.0 23 57 2 0.01 2 0.1 1.0 10 2 3 3 5 7 2 3 5 7 2 3 5 7 i dp =12a (pw 10 s) i d =3a 100 s dc operation (ta=25 c) 1ms 100ms 10ms operation in this area is limited by r ds (on). 10 100 357 --6.0v --3.0v a s o drain-to-source voltage, v ds -- v drain current, i d -- a i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 1unit
VEC2616 no. a1822-5/9 gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf a s o drain-to-source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v 0 0 3 -- 1 -- 2 5 -- 3 -- 4 7 -- 5 -- 6 -- 7 9 -- 8 --10 -- 9 11 12 4 6 8 10 v ds = --30v i d = --2.5a it15919 --60 0 50 100 150 200 300 250 --40 --20 0 20 40 60 80 100 120 140 160 v gs = --4.5v, i d = --0.75a v gs = --10.0v, i d = --1.5a it15914 0--2 200 -- 4 300 0 50 100 250 150 --6 --8 --12 --10 --14 --16 ta=25 c i d = --1.5a --0.75a it15913 0 2 5 7 -- 5 1000 100 7 5 3 3 2 2 --20 --15 --10 --25 --30 --35 --40 --45 --50 --55 --60 f=1mhz it15918 ciss coss crss --0.1 100 2 3 10 2 2 --1.0 227 357 35 7 5 7 5 3 it15917 t d(on) t r v dd = --30v v gs = --10v t f t d(off) --0.01 --0.4 --0.6 --0.8 --1.0 --1.2 --0.2 --0.1 2 7 5 3 2 --1.0 2 7 7 5 3 v gs =0v --0.01 --0.1 0.1 --1.0 2 3 57 2 3 57 2 3 5 1.0 2 7 5 3 2 10 7 5 3 2 v ds = --10v it15915 it15916 ta= - -25 c --25 c 25 c ta=75 c 25 c 75 c v gs = --4.0v, i d = --0.75a 7 5 3 [pch] [pch] [pch] [pch] [pch] [pch] [pch] [pch] it15920 --0.01 --0.1 23 5 23 57 7 --1.0 23 57 2 --0.01 2 --0.1 --1.0 --10 2 3 5 7 2 3 5 7 2 3 5 7 i dp = --10a (pw 10 s) i d = --2.5a 100 s dc operation (ta=25 c) 1ms 100ms 10ms operation in this area is limited by r ds (on). --10 --100 357 ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 1unit
VEC2616 no. a1822-6/9 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0 0 20 40 60 1.0 0.6 0.2 0.8 0.9 0.4 80 1.2 140 100 120 160 it15921 1unit [nch/pch] when mounted on ceramic substrate (900mm 2 0.8mm) total dissipation
VEC2616 no. a1822-7/9 taping speci cation VEC2616-tl-h
VEC2616 no. a1822-8/9 outline drawing land pattern example VEC2616-tl-h mass (g) unit 0.015 * for reference mm unit: mm 0.4 0.6 2.8 0.65
VEC2616 ps no. a1822-9/9 note on usage : since the VEC2616 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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